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D11C702
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D11C702

SKU: D11C702
D11C702 Transistor Silicon NPN CASE: TO50 MAKE: General Electric
Product specifications
Type Transistor Silicon NPN
Case TO50
Manufacturer General Electric
Vbr CEO 40
Max. PD (W) 300m
Derate (Amb) (W/°C) 1.7m
hfe 100
Icbo Max. @Vcb Max. (A) 15u
Polarity NPN
Trans. Freq (Hz) Min. 130M
@VCE (test) (V) 10
Oper. Temp (°C) Max. 175
@Ic (A) 150m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.3 W
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.05 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 130 MHz
Forward Current Transfer Ratio (hFE), MIN 100
SKU 722123
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