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D11C7F1
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D11C7F1

SKU: D11C7F1
D11C7F1 Transistor Silicon NPN CASE: TO3 MAKE: General Electric
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer General Electric
Vbr CBO 45
Vbr CEO 25
Max. PD (W) 1.2
Min hFE 20
Ic Max. (A) 1.0
@Ic (test) (A) 150m
Icbo Max. @Vcb Max. (A) 10n
Polarity NPN
Tr Max. (s) 70n
R(sat) (Û) 2.3
Derate Above 25°C 17m
Trans. Freq (Hz) Min. 50k
Oper. Temp (°C) Max. 175
@VCE (V) 10
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 1.2 W
Maximum Collector-Base Voltage |Vcb| 45 V
Maximum Collector-Emitter Voltage |Vce| 25 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 0.05 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 722119
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