D11E407

SKU: D11E407

D11E407 Transistor Silicon NPN CASE: TO5 MAKE: General Electric

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO5
Manufacturer	General Electric
Vbr CBO	110
Vbr CEO	80
Max. PD (W)	800m
Derate (Amb) (W/°C)	4.7m
Ic Max. (A)	1.0
Icbo Max. @Vcb Max. (A)	10n
Polarity	NPN
Tr Max. (s)	70n
t(stor) Max. (S)	130n+
Trans. Freq (Hz) Min.	300M
Oper. Temp (°C) Max.	175
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.8 W
Maximum Collector-Base Voltage \|Vcb\|	110 V
Maximum Collector-Emitter Voltage \|Vce\|	80 V
Maximum Collector Current \|Ic max\|	1 A
Max. Operating Junction Temperature (Tj)	175 °C
Transition Frequency (ft):	300 MHz
SKU	722115

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