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D16G6
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D16G6

SKU: D16G6
D16G6 Transistor Silicon NPN CASE: TO92 MAKE: General Electric
Product specifications
Type Transistor Silicon NPN
Case TO92
Manufacturer General Electric
Vbr CBO 30
Vbr CEO 12
Max. PD (W) 200m
C(ob) (F) 1.2p
Derate (Amb) (W/°C) 2.6m
hfe 20
Ic Max. (A) 25m
Icbo Max. @Vcb Max. (A) 500n
Polarity NPN
Trans. Freq (Hz) Min. 500M
@VCE (test) (V) 10
Oper. Temp (°C) Max. 100
@Ic (A) 5.0m
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 12 V
Maximum Emitter-Base Voltage |Veb| 3 V
Maximum Collector Current |Ic max| 0.025 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 1.5 pF
Transition Frequency (ft): 500 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 722021
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