| Weight |
0.01 kg
|
| Type |
Transistor Silicon NPN |
| Case |
TO92 |
| Manufacturer |
General Electric |
| Vbr CBO |
18 |
| Vbr CEO |
18 |
| Max. PD (W) |
90m |
| C(ob) (F) |
4.0p |
| Derate (Amb) (W/°C) |
1.2m |
| hfe |
180 |
| Icbo Max. @Vcb Max. (A) |
25n |
| Polarity |
NPN |
| @VCE (test) (V) |
2.5 |
| Oper. Temp (°C) Max. |
100 |
| @Ic (A) |
100u |
| Pinout Equivalence Number |
N/A |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
0.09 W |
| Maximum Collector-Base Voltage |Vcb| |
40 V |
| Maximum Collector-Emitter Voltage |Vce| |
40 V |
| Maximum Emitter-Base Voltage |Veb| |
5 V |
| Maximum Collector Current |Ic max| |
0.2 A |
| Max. Operating Junction Temperature (Tj) |
100 °C |
| Collector Capacitance (Cc) |
4 pF |
| Transition Frequency (ft): |
80 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
180 |
| SKU |
721933 |