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D32S10
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D32S10

SKU: D32S10
D32S10 Transistor Silicon NPN CASE: TO92 MAKE: GEC Plessey - GPS
Product specifications
Type Transistor Silicon NPN
Case TO92
Manufacturer GEC Plessey - GPS
Vbr CBO 60
Vbr CEO 60
Max. PD (W) 400m
Derate (Amb) (W/°C) 4.0m
hfe 600
Ic Max. (A) 100m
Icbo Max. @Vcb Max. (A) 25n
Polarity NPN
@VCE (test) (V) 5.0
Oper. Temp (°C) Max. 125
@Ic (A) 100u
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.4 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 200
SKU 1251242
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