The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
D40V6

D40V6

SKU: D40V6
D40V6 Transistor Silicon NPN CASE: TO202 MAKE: General Electric
Product specifications
Type Transistor Silicon NPN
Case TO202
Manufacturer General Electric
Vbr CEO 350
Max. PD (W) 9.0
Max. hFE 180
Min hFE 60
Ic Max. (A) 100m
@Ic (test) (A) 20m
Polarity NPN
Derate Above 25°C 72m
Trans. Freq (Hz) Min. 50M
Oper. Temp (°C) Max. 140
@VCE (V) 10
Pinout Equivalence Number 3-17
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 9 W
Maximum Collector-Base Voltage |Vcb| 400 V
Maximum Collector-Emitter Voltage |Vce| 350 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 3 pF
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN 60
SKU 721714
Back