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D41E7
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D41E7

SKU: D41E7
D41E7 Transistor Silicon PNP CASE: TO202 MAKE: Generic
Product specifications
Type Transistor Silicon PNP
Case TO202
Manufacturer Generic
Vbr CEO 80
Max. PD (W) 8.0
Derate (Amb) (W/°C) 64m
Min hFE 50
Ic Max. (A) 2.0
@Ic (test) (A) 100m
Icbo Max. @Vcb Max. (A) 100n
Polarity PNP
Tr Max. (s) 180n
R(sat) (Û) 1.0
Trans. Freq (Hz) Min. 75M
Oper. Temp (°C) Max. 140
@VCE (V) 2.0
Pinout Equivalence Number 4-33
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 8 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 50
SKU 18691
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