| Weight |
0.01 kg
|
| Type |
Transistor Silicon PNP |
| Case |
TO202 |
| Manufacturer |
General Electric |
| Vbr CEO |
90 |
| Max. PD (W) |
12 |
| t(on) Delay (S) |
300n- |
| t(f) Max. (S) |
300n- |
| Max. hFE |
10k- |
| Min hFE |
2.0k |
| Ic Max. (A) |
4.0 |
| @Ic (test) (A) |
1.0 |
| Mat. |
Silicon Logic |
| Polarity |
PNP |
| Tr Max. (s) |
50n- |
| t(stor) Max. (S) |
400n- |
| Derate Above 25°C |
100m |
| Trans. Freq (Hz) Min. |
50M |
| @VCE (test) |
2.0 |
| Oper. Temp (°C) Max. |
150 |
| Pinout Equivalence Number |
3-12 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
12 W |
| Maximum Collector-Base Voltage |Vcb| |
90 V |
| Maximum Collector-Emitter Voltage |Vce| |
80 V |
| Maximum Emitter-Base Voltage |Veb| |
5 V |
| Maximum Collector Current |Ic max| |
4 A |
| Max. Operating Junction Temperature (Tj) |
150 °C |
| Collector Capacitance (Cc) |
75 pF |
| Transition Frequency (ft): |
50 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
2000 |
| SKU |
19315 |