D45C7

D45C7

SKU: D45C7
D45C7 Transistor Silicon PNP CASE: TOP66 MAKE: Generic
Datasheet
D45C7 Datasheet
Product specifications
Type Transistor Silicon PNP
Case TOP66
Manufacturer MOSPEC Semiconductor
Vbr CEO 60
Max. PD (W) 30
Derate (Amb) (W/°C) 238m
t(f) Max. (S) 50n-
Min hFE 25
Ic Max. (A) 4.0
@Ic (test) (A) 200m
Icbo Max. @Vcb Max. (A) 10u
Polarity PNP
Tr Max. (s) 50n-
Trans. Freq (Hz) Min. 40M
Oper. Temp (°C) Max. 140
@VCE (V) 1.0
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 30 W
Maximum Collector-Base Voltage |Vcb| 70 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 4 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 125 pF
Transition Frequency (ft): 20 MHz
Forward Current Transfer Ratio (hFE), MIN 25
SKU 721639
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