D64DS7

SKU: D64DS7

D64DS7 Transistor Silicon NPN CASE: TO3 MAKE: General Electric

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO3
Manufacturer	General Electric
Vbr CEO	500
Max. PD (W)	125
Max. hFE	35-
Min hFE	20
Ic Max. (A)	20.
@Ic (test) (A)	30
Icbo Max. @Vcb Max. (A)	2.5m
Mat.	Silicon Logic
Polarity	NPN
@VCE (test)	5.0
Oper. Temp (°C) Max.	150
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	125 W
Maximum Collector-Base Voltage \|Vcb\|	700 V
Maximum Collector-Emitter Voltage \|Vce\|	500 V
Maximum Emitter-Base Voltage \|Veb\|	8 V
Maximum Collector Current \|Ic max\|	20 A
Max. Operating Junction Temperature (Tj)	175 °C
Forward Current Transfer Ratio (hFE), MIN	100
SKU	721562

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