The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
D66DW1
View detailed images (1)

D66DW1

SKU: D66DW1
D66DW1 Transistor Silicon NPN CASE: TO53 MAKE: General Electric
Product specifications
Type Transistor Silicon NPN
Case TO53
Manufacturer General Electric
Vbr CEO 600
Max. PD (W) 167
t(on) Delay (S) .50u
t(f) Max. (S) 4.0u
Min hFE 25
Ic Max. (A) 50
@Ic (test) (A) 50
Icbo Max. @Vcb Max. (A) 2.5m
Mat. Silicon Logic
Polarity NPN
Tr Max. (s) 1.0u
t(stor) Max. (S) 15u
Derate Above 25°C 1.3
@VCE (test) 5.0
Oper. Temp (°C) Max. 150
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 167 W
Maximum Collector-Base Voltage |Vcb| 700 V
Maximum Collector-Emitter Voltage |Vce| 600 V
Maximum Emitter-Base Voltage |Veb| 8 V
Maximum Collector Current |Ic max| 50 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 100
SKU 721549
Back