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D67DE6
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D67DE6

SKU: D67DE6
D67DE6 Transistor Silicon NPN CASE: MODULE MAKE: General Electric
Datasheet
D67DE6 Datasheet
Product specifications
Type Transistor Silicon NPN
Case MODULE
Manufacturer General Electric
Vbr CBO 600
Vbr CEO 450
Ckts Per Dev. 1
Max. PD (W) 313
t(f) Max. (S) 3.0u
Min hFE 25
Ic Max. (A) 100
@Ic (test) (A) 150
Polarity NPN
Tr Max. (s) 1.0u
Therm Res. ÚJC (°C/W) 400m
Therm Res. (J-C) 400m
VCE(sat) Max. 3.0
Oper. Temp (°C) Max. 150
Isolated Case (Y/N) Yes
Pinout Equivalence Number 4-4
Maximum Collector Power Dissipation (Pc) 312 W
Maximum Collector-Base Voltage |Vcb| 600 V
Maximum Collector-Emitter Voltage |Vce| 450 V
Maximum Emitter-Base Voltage |Veb| 8 V
Maximum Collector Current |Ic max| 100 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 100
SKU 164505
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