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DCX114EU
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DCX114EU

SKU: DCX114EU
DCX114EU Transistor Silicon Pre-Biased-NPN - PNP CASE: SOT363 MAKE: Diodes Inc
Datasheet
DCX114EU Datasheet
Product specifications
Type Transistor Silicon Pre-Biased-NPN - PNP
Case SOT363
Manufacturer Diodes Inc
Polarity Pre-Biased-NPN*PNP
Maximum Collector Power Dissipation (Pc) 0.1 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SMD Transistor Code C13
Built in Bias Resistor R1 10 kOhm
Built in Bias Resistor R2 10 kOhm
Typical Resistor Ratio R1/R2 1
SKU 535447
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