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DDA114EU
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DDA114EU

SKU: DDA114EU
DDA114EU Transistor Silicon NPN CASE: SOT363 MAKE: Diodes Inc
Datasheet
DDA114EU Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT363
Manufacturer Diodes Inc
Polarity Pre-Biased-PNP
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 250 MHz
SMD Transistor Code P13
Built in Bias Resistor R1 10 kOhm
Built in Bias Resistor R2 10 kOhm
Typical Resistor Ratio R1/R2 1
SKU 535480
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