DDA114TH
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DDA114TH

SKU: DDA114TH
DDA114TH Transistor Silicon NPN CASE: SOT563F MAKE: Diodes Inc
Datasheet
DDA114TH Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT563F
Manufacturer Diodes Inc
Polarity Pre-Biased-PNP
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN 100
SMD Transistor Code P12
Built in Bias Resistor R1 10 kOhm
SKU 535481
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