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DDA124EH
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DDA124EH

SKU: DDA124EH
DDA124EH Transistor Silicon NPN CASE: SOT563F MAKE: Diodes Inc
Datasheet
DDA124EH Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT563F
Manufacturer Diodes Inc
Polarity Pre-Biased-PNP
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN 56
SMD Transistor Code P17
Built in Bias Resistor R1 22 kOhm
Built in Bias Resistor R2 22 kOhm
Typical Resistor Ratio R1/R2 1
SKU 535494
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