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DDC114EH
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DDC114EH

SKU: DDC114EH
DDC114EH Transistor Silicon NPN CASE: SOT563F MAKE: Diodes Inc
Datasheet
DDC114EH Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT563F
Manufacturer Diodes Inc
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SMD Transistor Code N13
Built in Bias Resistor R1 10 kOhm
Built in Bias Resistor R2 10 kOhm
Typical Resistor Ratio R1/R2 1
SKU 535509
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