DDC114TH
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DDC114TH

SKU: DDC114TH
DDC114TH Transistor Silicon NPN CASE: SOT563F MAKE: Diodes Inc
Datasheet
DDC114TH Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT563F
Manufacturer Diodes Inc
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN 100
SMD Transistor Code N12
Built in Bias Resistor R1 10 kOhm
SKU 535511
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