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DDTA113ZE
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DDTA113ZE

SKU: DDTA113ZE
DDTA113ZE Transistor Silicon NPN CASE: SOT416 MAKE: Diodes Inc
Datasheet
DDTA113ZE Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT416
Manufacturer Diodes Inc
Polarity Pre-Biased-PNP
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN 33
SMD Transistor Code P02
Built in Bias Resistor R1 1 kOhm
Built in Bias Resistor R2 10 kOhm
Typical Resistor Ratio R1/R2 0.1
SKU 535592
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