DDTA114EKA
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DDTA114EKA

SKU: DDTA114EKA
DDTA114EKA Transistor Silicon NPN CASE: SOT346 MAKE: Diodes Inc
Datasheet
DDTA114EKA Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT346
Manufacturer Diodes Inc
Polarity Pre-Biased-PNP
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN 68
SMD Transistor Code P13
Built in Bias Resistor R1 10 kOhm
Built in Bias Resistor R2 10 kOhm
Typical Resistor Ratio R1/R2 1
SKU 535714
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