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DDTA114YLP
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DDTA114YLP

SKU: DDTA114YLP
DDTA114YLP Transistor Silicon PNP CASE: DFN1006-3 MAKE: Generic
Datasheet
DDTA114YLP Datasheet
Product specifications
Type Transistor Silicon PNP
Case DFN1006-3
Manufacturer Diodes
Polarity Pre-Biased-PNP
Maximum Collector Power Dissipation (Pc) 0.25 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN 80
SMD Transistor Code P3
Built in Bias Resistor R1 10 kOhm
Built in Bias Resistor R2 47 kOhm
Typical Resistor Ratio R1/R2 0.21
SKU 1429148
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