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DDTA115EE
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DDTA115EE

SKU: DDTA115EE
DDTA115EE Transistor Silicon NPN CASE: SOT416 MAKE: Diodes Inc
Datasheet
DDTA115EE Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT416
Manufacturer Diodes Inc
Polarity Pre-Biased-PNP
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.02 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN 82
SMD Transistor Code P24
Built in Bias Resistor R1 100 kOhm
Built in Bias Resistor R2 100 kOhm
Typical Resistor Ratio R1/R2 1
SKU 535598
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