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DDTA143EE
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DDTA143EE

SKU: DDTA143EE
DDTA143EE Transistor Silicon NPN CASE: SOT416 MAKE: Diodes Inc
Datasheet
DDTA143EE Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT416
Manufacturer Diodes Inc
Polarity Pre-Biased-PNP
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SMD Transistor Code P08
Built in Bias Resistor R1 4.7 kOhm
Built in Bias Resistor R2 4.7 kOhm
Typical Resistor Ratio R1/R2 1
SKU 535614
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