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DDTC114EE
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DDTC114EE

SKU: DDTC114EE
DDTC114EE SI-NPN-DIGI - Case: SOT416 Make: Diodes Inc
+ VAT 20% for UK purchases
Product specifications
Type Transistor Silicon NPN
Case SOT416
Manufacturer Diodes Inc
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.05 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SMD Transistor Code N13
Built in Bias Resistor R1 10 kOhm
Built in Bias Resistor R2 10 kOhm
Typical Resistor Ratio R1/R2 1
SKU 535630
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