DDTC114ELP
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DDTC114ELP

SKU: DDTC114ELP
DDTC114ELP Transistor Silicon Pre-Biased-NPN CASE: DFN1006-3 MAKE: Generic
Datasheet
DDTC114ELP Datasheet
Product specifications
Type Transistor Silicon Pre-Biased-NPN
Case DFN1006-3
Manufacturer Diodes
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.25 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN 10
SMD Transistor Code N5
Built in Bias Resistor R1 10 kOhm
Built in Bias Resistor R2 10 kOhm
Typical Resistor Ratio R1/R2 1
SKU 1429208
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