The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
DDTC123JLP
View detailed images (1)

DDTC123JLP

SKU: DDTC123JLP
DDTC123JLP Transistor Silicon Pre-Biased-NPN CASE: DFN1006-3 MAKE: Generic
Datasheet
DDTC123JLP Datasheet
Product specifications
Type Transistor Silicon Pre-Biased-NPN
Case DFN1006-3
Manufacturer Diodes
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.25 W
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN 50
SMD Transistor Code N06
Built in Bias Resistor R1 2.2 kOhm
Built in Bias Resistor R2 47 kOhm
Typical Resistor Ratio R1/R2 0.047
SKU 1429221
Back