DDTC123YE
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DDTC123YE

SKU: DDTC123YE
DDTC123YE Transistor Silicon NPN CASE: SOT416 MAKE: Diodes Inc
Datasheet
DDTC123YE Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT416
Manufacturer Diodes Inc
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN 33
SMD Transistor Code N05
Built in Bias Resistor R1 2.2 kOhm
Built in Bias Resistor R2 10 kOhm
Typical Resistor Ratio R1/R2 0.22
SKU 535643
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