DDTD113EC
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DDTD113EC

SKU: DDTD113EC
DDTD113EC Transistor Silicon NPN CASE: SOT23 MAKE: Diodes Inc
Datasheet
DDTD113EC Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT23
Manufacturer Diodes Inc
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 33
SMD Transistor Code N60
Built in Bias Resistor R1 1 kOhm
Built in Bias Resistor R2 1 kOhm
Typical Resistor Ratio R1/R2 1
SKU 535661
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