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DDTD123EC
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DDTD123EC

SKU: DDTD123EC
DDTD123EC Transistor Silicon NPN CASE: SOT23 MAKE: Diodes Inc
Datasheet
DDTD123EC Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT23
Manufacturer Diodes Inc
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 39
SMD Transistor Code N61
Built in Bias Resistor R1 2.2 kOhm
Built in Bias Resistor R2 2.2 kOhm
Typical Resistor Ratio R1/R2 1
SKU 535669
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