DDTD123YC
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DDTD123YC

SKU: DDTD123YC
DDTD123YC Transistor Silicon NPN CASE: SOT23 MAKE: Diodes Inc
Datasheet
DDTD123YC Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT23
Manufacturer Diodes Inc
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 56
SMD Transistor Code N66
Built in Bias Resistor R1 2.2 kOhm
Built in Bias Resistor R2 10 kOhm
Typical Resistor Ratio R1/R2 0.22
SKU 535671
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