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DKS22
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DKS22

SKU: DKS22
DKS22 Transistor Silicon NPN CASE: TO92 MAKE: Samsung
Product specifications
Type Transistor Silicon NPN
Case TO92
Manufacturer Samsung
Vbr CEO 25
Max. PD (W) 600m
Max. hFE 40k
Min hFE 10k
Ic Max. (A) 500m
@Ic (test) (A) 100m
Icbo Max. @Vcb Max. (A) 100n
Mat. Silicon Logic
Polarity NPN
Trans. Freq (Hz) Min. 125M
@VCE (test) 5.0
Oper. Temp (°C) Max. 125
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.6 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 20 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 12000
SKU 167044
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