Home / Actives / Transistor / DKS23
DKS23

DKS23

SKU: DKS23
DKS23 Transistor Silicon PNP CASE: TO92 MAKE: Samsung
Product specifications
Type Transistor Silicon PNP
Case TO92
Manufacturer Samsung
Vbr CBO 30
Vbr CEO 25
Max. PD (W) 600m
Max. hFE 15k
Min hFE 2.0k
Ic Max. (A) 500m
@Ic (test) (A) 100m
Icbo Max. @Vcb Max. (A) 100n
Polarity PNP
Trans. Freq (Hz) Min. 175M
Oper. Temp (°C) Max. 125
@VCE (V) 5.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.6 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 20 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 175 MHz
Forward Current Transfer Ratio (hFE), MIN 5000
SKU 569265
Back