DMMT5551
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DMMT5551

SKU: DMMT5551
DMMT5551 Transistor Silicon NPN CASE: SOT26 MAKE: Generic
Datasheet
DMMT5551 Datasheet
Product specifications
Equivalent DMMT5551S
Type Transistor Silicon NPN
Case SOT26
Manufacturer Diodes
Polarity NPN
Maximum Collector Power Dissipation (Pc) 0.3 W
Maximum Collector-Base Voltage |Vcb| 180 V
Maximum Collector-Emitter Voltage |Vce| 160 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 0.2 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 6 pF
Transition Frequency (ft): 300 MHz
Forward Current Transfer Ratio (hFE), MIN 80
SMD Transistor Code K4R
SKU 1429574
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