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DMS935E1
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DMS935E1

SKU: DMS935E1
DMS935E1 Transistor Silicon NPN CASE: SOT666 MAKE: Murata Power Solutions
Datasheet
DMS935E1 Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT666
Manufacturer Murata Power Solutions
Polarity NPN
Maximum Collector Power Dissipation (Pc) 0.125 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 20 V
Maximum Emitter-Base Voltage |Veb| 3 V
Maximum Collector Current |Ic max| 0.05 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 1300 MHz
Forward Current Transfer Ratio (hFE), MIN 100
SMD Transistor Code X0
SKU 1429577
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