| DMS935E2 Datasheet |
| Type | Transistor Silicon NPN | |
| Case | SOT666 | |
| Manufacturer | Murata Power Solutions | |
| Polarity | NPN | |
| Maximum Collector Power Dissipation (Pc) | 0.125 W | |
| Maximum Collector-Base Voltage |Vcb| | 30 V | |
| Maximum Collector-Emitter Voltage |Vce| | 20 V | |
| Maximum Emitter-Base Voltage |Veb| | 3 V | |
| Maximum Collector Current |Ic max| | 0.05 A | |
| Max. Operating Junction Temperature (Tj) | 150 °C | |
| Transition Frequency (ft): | 1300 MHz | |
| Forward Current Transfer Ratio (hFE), MIN | 100 | |
| SMD Transistor Code | X1 | |
| SKU | 1429578 | |