DQN1006

DQN1006

SKU: DQN1006
DQN1006 Transistor Silicon NPN CASE: Standard MAKE: DIO
Product specifications
Type Transistor Silicon NPN
Case Standard
Manufacturer DIO
Vbr CBO 500
Vbr CEO 400
Max. PD (W) 600m
hfe 40
Ic Max. (A) 50m
Icbo Max. @Vcb Max. (A) 100u
Polarity NPN
@VCE (test) (V) 10
Oper. Temp (°C) Max. 75
@Ic (A) 1.0m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.6 W
Maximum Collector-Base Voltage |Vcb| 500 V
Maximum Collector-Emitter Voltage |Vce| 400 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.05 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 40
SKU 1251913
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