DRA2123J
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DRA2123J

SKU: DRA2123J
DRA2123J Transistor Silicon PNP CASE: Mini3-G3-B MAKE: Taitek Components
Datasheet
DRA2123J Datasheet
Product specifications
Type Transistor Silicon PNP
Case Mini3-G3-B
Manufacturer Taitek Components
Polarity Pre-Biased-PNP
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 80
SMD Transistor Code L4
Built in Bias Resistor R1 2.2 kOhm
Built in Bias Resistor R2 47 kOhm
Typical Resistor Ratio R1/R2 0.047
SKU 1429638
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