DRA2123Y
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DRA2123Y

SKU: DRA2123Y
DRA2123Y Transistor Silicon PNP CASE: Mini3-G3-B MAKE: Taitek Components
Datasheet
DRA2123Y Datasheet
Product specifications
Type Transistor Silicon PNP
Case Mini3-G3-B
Manufacturer Taitek Components
Polarity Pre-Biased-PNP
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 30
SMD Transistor Code L3
Built in Bias Resistor R1 2.2 kOhm
Built in Bias Resistor R2 10 kOhm
Typical Resistor Ratio R1/R2 0.22
SKU 1429639
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