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DRA2514E
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DRA2514E

SKU: DRA2514E
DRA2514E Transistor Silicon PNP CASE: Mini3-G3-B MAKE: Taitek Components
Datasheet
DRA2514E Datasheet
Product specifications
Type Transistor Silicon PNP
Case Mini3-G3-B
Manufacturer Taitek Components
Polarity Pre-Biased-PNP
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 60
SMD Transistor Code UZ
Built in Bias Resistor R1 10 kOhm
Built in Bias Resistor R2 10 kOhm
Typical Resistor Ratio R1/R2 1
SKU 1429653
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