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DRA2522J
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DRA2522J

SKU: DRA2522J
DRA2522J Transistor Silicon PNP CASE: Mini3-G3-B MAKE: Taitek Components
Datasheet
DRA2522J Datasheet
Product specifications
Type Transistor Silicon PNP
Case Mini3-G3-B
Manufacturer Taitek Components
Polarity Pre-Biased-PNP
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 20
SMD Transistor Code S1
Built in Bias Resistor R1 0.27 kOhm
Built in Bias Resistor R2 5 kOhm
Typical Resistor Ratio R1/R2 0.054
SKU 1429654
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