DRA2L14Y
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DRA2L14Y

SKU: DRA2L14Y
DRA2L14Y Transistor Silicon PNP CASE: Mini3-G3-B MAKE: Taitek Components
Datasheet
DRA2L14Y Datasheet
Product specifications
Type Transistor Silicon PNP
Case Mini3-G3-B
Manufacturer Taitek Components
Polarity Pre-Biased-PNP
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 30 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 80
SMD Transistor Code K4
Built in Bias Resistor R1 10 kOhm
Built in Bias Resistor R2 47 kOhm
Typical Resistor Ratio R1/R2 0.21
SKU 1429659
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