DRA4143E
View detailed images (1)

DRA4143E

SKU: DRA4143E
DRA4143E Transistor Silicon PNP CASE: NS-B2-B-B MAKE: Taitek Components
Datasheet
DRA4143E Datasheet
Product specifications
Type Transistor Silicon PNP
Case NS-B2-B-B
Manufacturer Taitek Components
Polarity Pre-Biased-PNP
Maximum Collector Power Dissipation (Pc) 0.3 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 20
SMD Transistor Code L5
Built in Bias Resistor R1 4.7 kOhm
Built in Bias Resistor R2 4.7 kOhm
Typical Resistor Ratio R1/R2 1
SKU 1429704
Back