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DT100-900
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DT100-900

SKU: DT100-900
DT100-900 Transistor Silicon NPN CASE: Standard MAKE: Special
Product specifications
Type Transistor Silicon NPN
Case Standard
Manufacturer Special
Vbr CEO 900
Max. PD (W) 1.5k
t(f) Max. (S) 2.5u
Min hFE 9.0
Ic Max. (A) 300
@Ic (test) (A) 100
Icbo Max. @Vcb Max. (A) 10m
Polarity NPN
Oper. Temp (°C) Max. 135
@VCE (V) 2.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 1500 W
Maximum Collector-Base Voltage |Vcb| 900 V
Maximum Collector-Emitter Voltage |Vce| 800 V
Maximum Collector Current |Ic max| 200 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 9
SKU 1276450
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