DT200-900

SKU: DT200-900

DT200-900 Transistor Silicon NPN CASE: Standard MAKE: Special

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	Standard
Manufacturer	Special
Vbr CEO	900
Max. PD (W)	2.0k
t(f) Max. (S)	1.0u
Min hFE	7
Ic Max. (A)	300
@Ic (test) (A)	200
Icbo Max. @Vcb Max. (A)	10m
Polarity	NPN
Oper. Temp (°C) Max.	175
@VCE (V)	2
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	1500 W
Maximum Collector-Base Voltage \|Vcb\|	900 V
Maximum Collector-Emitter Voltage \|Vce\|	700 V
Maximum Collector Current \|Ic max\|	300 A
Max. Operating Junction Temperature (Tj)	150 °C
Forward Current Transfer Ratio (hFE), MIN	7
SKU	1276452

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