The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
DTA114ECA
View detailed images (5)

DTA114ECA

SKU: DTA114ECA
DTA114ECA Transistor Silicon NPN CASE: SOT23 MAKE: Rohm Semiconductor
Datasheet
DTA114ECA Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT23
Manufacturer Rohm Semiconductor
Polarity Pre-Biased-PNP
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 140 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SMD Transistor Code 14
Built in Bias Resistor R1 10 kOhm
Built in Bias Resistor R2 10 kOhm
Typical Resistor Ratio R1/R2 1
SKU 351705
Back