DTA123EEFRA
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DTA123EEFRA

SKU: DTA123EEFRA
DTA123EEFRA Transistor Silicon PNP CASE: SOT416 MAKE: Rohm Semiconductor
Product specifications
Type Transistor Silicon PNP
Case SOT416
Manufacturer Rohm Semiconductor
Polarity Pre-Biased-PNP
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SMD Transistor Code 12
Built in Bias Resistor R1 2.2 kOhm
Built in Bias Resistor R2 2.2 kOhm
Typical Resistor Ratio R1/R2 1
SKU 1430229
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