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DTA123JE
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DTA123JE

SKU: DTA123JE
DTA123JE Transistor Silicon NPN CASE: SOT416 MAKE: Rohm Semiconductor
Datasheet
DTA123JE Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT416
Manufacturer Rohm Semiconductor
Polarity Pre-Biased-PNP
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 12 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN 80
SMD Transistor Code 132_6M_E32
Built in Bias Resistor R1 2.2 kOhm
Built in Bias Resistor R2 47 kOhm
Typical Resistor Ratio R1/R2 0.047
SKU 351745
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