DTA123YE
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DTA123YE

SKU: DTA123YE
DTA123YE Transistor Silicon NPN CASE: SOT416 MAKE: Rohm Semiconductor
Datasheet
DTA123YE Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT416
Manufacturer Rohm Semiconductor
Polarity Pre-Biased-PNP
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 12 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN 33
SMD Transistor Code 52
Built in Bias Resistor R1 2.2 kOhm
Built in Bias Resistor R2 10 kOhm
Typical Resistor Ratio R1/R2 0.22
SKU 351750
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