The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
DTB113EK
View detailed images (4)

DTB113EK

SKU: DTB113EK
DTB113EK Transistor Silicon NPN CASE: SOT346 MAKE: Rohm Semiconductor
Datasheet
DTB113EK Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT346
Manufacturer Rohm Semiconductor
Mat. Silicon Logic
Polarity Pre-Biased-PNP
Mat. Struct. PNP
Pinout Equivalence Number N/A
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 140 MHz
Forward Current Transfer Ratio (hFE), MIN 33
SMD Transistor Code F11
Built in Bias Resistor R1 1 kOhm
Built in Bias Resistor R2 1 kOhm
Typical Resistor Ratio R1/R2 1
SKU 351820
Back